PART |
Description |
Maker |
MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器(的CMOS 256K × 16位快速页面存取模式动态内存) CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
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Fujitsu Limited Fujitsu, Ltd.
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CAT28LV256 CAT28LV256N-20T CAT28LV256N-25T CAT28LV |
256K-bit CMOS parallel EEPROM 250ns 256K-bit CMOS parallel EEPROM 200ns 256K-bit CMOS parallel EEPROM 300ns 256K-Bit CMOS PARALLEL E2PROM 128Kx8 EEPROM 128Kx8 EEPROM 32K X 8 EEPROM 3V, 200 ns, PQCC32
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http:// CATALYST[Catalyst Semiconductor] Intersil, Corp. Epson (China) Co., Ltd. STMicroelectronics N.V. ON SEMICONDUCTOR
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29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
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Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
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NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy] 4,194,304-Bit (256k x 16) High Performance CMOS EPROM 4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM 4,194,304位(256k × 16)高性能的CMOS存储
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FAIRCHILD[Fairchild Semiconductor]
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MX23C4096 23C4096 MX23C4096QC-20 MX23C4096PC-10 MX |
4M-BIT [256K x 16] CMOS MASK ROM 4分位[256K × 16]的CMOS掩膜ROM From old datasheet system
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Electronic Theatre Controls, Inc. http:// List of Unclassifed Manufacturers Macronix 旺宏 ETC[ETC] Macronix International
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KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
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SAMSUNG SEMICONDUCTOR CO. LTD.
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AT27C256 AT27C256R AT27C256R-12 AT27C256R-12JC AT2 |
256K 32K x 8 OTP CMOS EPROM 256K (128K x 8) OTP CMOS EPROM High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SOIC -40 to 85 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PQCC32 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDSO28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TVSOP -40 to 85 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TSSOP -40 to 85 8-Channel Analog Multiplexer/Demultiplexer 16-SSOP -40 to 85
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Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation] http://
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AS4C256K16E0 |
5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS动态RAM(扩展数据总线
|
Alliance Semiconductor Corporation
|
IDT71V416VL IDT71V416VS15YGI IDT71V416VL10BEG IDT7 |
From old datasheet system 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PDSO44 Transformers Only Module 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32 256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
IS61LV2568L-10T-TR IS61LV2568L-8TL IS61LV2568L08 |
256K X 8 STANDARD SRAM, 8 ns, PDSO44 LEAD FREE, PLASTIC, TSOP2-44 256K x 8 HIGH-SPEED CMOS STATIC RAM
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天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc.
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